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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) *Good Linearity of hFE *Complement to Type 2SB941 APPLICATIONS *Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 5 A 35 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICES ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 30mA ; IB= 0 IC= 3A; IB= 0.375A IC= 3A; VCE= 4V VCE= 60V; VBE= 0 VCE= 30V; IB= 0 VEB= 6V; IC= 0 IC= 1A ; VCE= 4V IC= 3A ; VCE= 4V IC= 0.5A ; VCE= 10V; f= 10MHz 70 10 30 MIN 60 2SD1266 TYP. MAX UNIT V 1.2 1.8 0.2 0.3 1.0 250 V V mA mA mA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 1A ; IB1= -IB2= 0.1A; VCC= 50V 0.5 2.5 0.4 s s s u hFE-1 classifications Q P 120-250 70-150 isc Websitewww.iscsemi.cn 2 |
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